1. product profile 1.1 general description 150w ldmos power transistor with improved video bandwidth for base station applications at frequencies from 2500 mhz to 2700 mhz. [1] 3gpp test model 1; 64 dpch; par = 8.4 db at 0.01 % probability on ccdf; carrier spacing 5 mhz. channel bandwidth is 3.84 mhz. 1.2 features and benefits ? excellent ruggedness ? high efficiency ? low r th providing excellent thermal stability ? decoupling leads to enable improved video bandwidth (60 mhz typical) ? lower output capacitance for improved performance in doherty applications ? designed for low memory effect s providing excellent digita l pre-distortion capability ? internally matched for ease of use ? integrated esd protection ? design optimized for gull-wing ? compliant to directive 2002/ 95/ec, regarding restriction of hazardous substances (rohs) 1.3 applications ? rf power amplifiers for w-cdma base statio ns and multi carrier applications in the 2500 mhz to 2700 mhz frequency range blf8g27ls-150v; BLF8G27LS-150GV power ldmos transistor rev. 3 ? 26 june 2013 product data sheet table 1. typical performance typical rf performance at t case = 25 ? c in a common source class-ab production test circuit. test signal f i dq v ds p l(av) g p ? d acpr 5m (mhz) (ma) (v) (w) (db) (%) (dbc) 2-carrier w-cdma 2600 to 2700 1300 28 45 18 30 ? 30 [1]
blf8g27ls-150v_8g27ls-150gv all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all right s reserved. product data sheet rev. 3 ? 26 june 2013 2 of 17 nxp semiconductors blf8g27ls-150(g)v power ldmos transistor 2. pinning information [1] connected to flange. 3. ordering information 4. limiting values [1] continuous use at maximum temperature will affect the reliability. table 2. pinning pin description simplified outline graphic symbol blf8g27ls-150v (sot1244b) 1d r a i n 2g a t e 3s o u r c e [1] 4 decoupling lead 5 decoupling lead 6n . c . 7n . c . BLF8G27LS-150GV (sot1244c) 1d r a i n 2g a t e 3s o u r c e [1] 4 decoupling lead 5 decoupling lead 6n . c . 7n . c . d d d d d d table 3. ordering information type number package name description version blf8g27ls-150v - earless flanged ceramic package; 6 leads sot1244b BLF8G27LS-150GV - earless flanged ceramic package; 6 leads sot1244c table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 65 v v gs gate-source voltage ? 0.5 +13 v t stg storage temperature ? 65 +150 ?c t j junction temperature [1] - 225 ?c
blf8g27ls-150v_8g27ls-150gv all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all right s reserved. product data sheet rev. 3 ? 26 june 2013 3 of 17 nxp semiconductors blf8g27ls-150(g)v power ldmos transistor 5. thermal characteristics 6. characteristics 7. test information 7.1 ruggedness in class-ab operation the blf8g27ls-150v and BLF8G27LS-150GV are capable of withstanding a load mismatch corresponding to vswr = 10 : 1 through all phases under the following conditions: v ds =28v; i dq = 1300 ma; p l = 150 w (cw); f = 2600 mhz. table 5. thermal characteristics symbol parameter conditions typ unit r th(j-c) thermal resistance from junction to case t case =80 ?c; p l = 45 w 0.30 k/w table 6. dc characteristics t j = 25 ? c unless otherwise specified. symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0v; i d =2.16ma65--v v gs(th) gate-source threshold voltage v ds =10 v; i d = 216 ma 1.5 1.9 2.3 v i dss drain leakage current v gs =0v; v ds =28v - - 4.5 ? a i dsx drain cut-off current v gs =v gs(th) +3.75 v; v ds =10v -40- a i gss gate leakage current v gs =11v; v ds = 0 v - - 450 na g fs forward transconductance v ds =10v; i d =10.8a - 16 - s r ds(on) drain-source on-state resistance v gs =v gs(th) + 3.75 v; i d =7.56a -0.06- ? table 7. rf characteristics test signal: 2-carrier w-cdma, 3gpp test model; 64 dpch; par = 8.4 db at 0.01 % probability on the ccdf, carrier spacing 5 mhz; f 1 = 2602.5 mhz; f 2 = 2607.5 mhz; f 3 = 2692.5 mhz; f 4 = 2697.5 mhz; rf performance at v ds =28v; i dq = 1300 ma; t case =25 ? c; unless otherwise specified; in a class-ab production test circuit. symbol parameter conditions min typ max unit g p power gain p l(av) =45w 16.8 18 - db rl in input return loss p l(av) =45w - ? 10 ? 7db ? d drain efficiency p l(av) =45w 26 30 - % acpr 5m adjacent channel power ratio (5 mhz) p l(av) =45w - ? 30 ? 26 dbc
blf8g27ls-150v_8g27ls-150gv all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all right s reserved. product data sheet rev. 3 ? 26 june 2013 4 of 17 nxp semiconductors blf8g27ls-150(g)v power ldmos transistor 7.2 impedance information [1] z s and z l defined in figure 1 . table 8. typical impedance measured load-pull data; i dq = 1300 ma; v ds = 28 v. f z s [1] z l [1] (mhz) (? ) (? ) blf8g27ls-150v 2500 0.70 ? j3.50 2.68 ? j1.86 2600 1.10 ? j4.40 2.86 ? j2.03 2700 2.00 ? j4.90 3.27 ? j1.87 BLF8G27LS-150GV 2500 1.00 ? j5.70 2.35 ? j4.04 2600 1.50 ? j6.90 2.52 ? j4.32 2700 2.10 ? j8.00 3.21 ? j4.36 fig 1. definition of transistor impedance 001aaf059 drain z l z s gate
blf8g27ls-150v_8g27ls-150gv all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all right s reserved. product data sheet rev. 3 ? 26 june 2013 5 of 17 nxp semiconductors blf8g27ls-150(g)v power ldmos transistor 7.3 test circuit [1] american technical ce ramics type 800b or capacitor of same quality. [2] murata or capacitor of same quality. printed-circuit board (pcb): rogers 4350b. see table 9 for a list of components. fig 2. component layout table 9. list of components see figure 2 for component layout. the used pcb material is rogers ro4350b with a thickness of 0.76 mm. component description value remarks c1 multilayer ceramic chip capacitor 0.7 ? f [1] atc800b c2 multilayer ceramic chip capacitor 1 ? f [2] murata c3 multilayer ceramic chip capacitor 100 nf [2] murata c4, c5, c9, c12 multilayer ce ramic chip capacitor 24 pf [1] atc800b c6, c11, c14, c15 multilayer ceramic chip capacitor 220 nf [2] murata c7, c10, c13, c16 multilayer ceramic chip capacitor 4.7 ? f, 5 0 v [2] murata c8 electrolytic capacitor > 470 ? f, 6 3 v r1 chip resistor 4.7 ? , 1 % tolerance smd 1206 r2, r3 chip resistor 0 ? smd 1206 d d d p p p p p p & |